Stress and Reliability for 3D Interconnects: A Material and Processing Perspective

Hosted by Dr. Jennifer Andrew

Department of Materials Science and Engineering Seminar Series

Tuesday, November 1, 2016                 4:05 – 4:55 p.m.                Rhines Hall, 125

 

Speaker:

Dr. Tengfei Jiang

Assistant Professor of Materials Science and Engineering

University of Central Florida

 

Title:

Stress and Reliability for 3D Interconnects: A Material and Processing Perspective

 

Abstract:

In the era of big data and internet of things, three-dimensional integrated circuit (3DIC) has emerged as a promising approach to overcome the limitations imposed on chip design, performance, and form factor in Moore’s law scaling. Cu through-silicon vias (TSVs) are used in a 3DIC to provide short vertical interconnections between stacked dies. While the benefits of 3D integration have been recognized for more than a decade, mass production of 3DIC devices has been challenging due to cost, yield, and reliability issues. In particular, the mismatch in the coefficient of thermal expansion between Cu and Si can induce a considerable amount of stress in and around the TSV to seriously degrade yield and reliability. This presentation will first review TSV-based 3D integration technologies, and then discuss the effect of material and processing on the thermal stress and its reliability consequences in TSV structures. Potential approach based on materials, processing, and design optimization to improve reliability will also be explored..

 

Bio-Sketch:

Dr. Tengfei Jiang is an Assistant Professor in the Department of Materials Science and Engineering at the University of Central Florida (UCF). She received the B.S. degree from Tsinghua University, Beijing, China in 2006, the M.S. degree from The Ohio State University, Columbus, OH, in 2009, and the Ph.D. degree from the University of Texas at Austin, Austin, TX, in 2015, all in Materials Science and Engineering. Dr. Jiang’s research interest is in the area of materials, processing, and reliability for advanced technologies such as micro/nano-electronics and micro/nano-manufacturing.